Manufacture :NXP SEMICONDUCTORS
125nC @ 10V,Gate Charge (Qg) @ Vgs
6686pF @ 50V,Input Capacitance (Ciss) @ Vds
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN7R0-100PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 100A (Ta) 12 mOhm @ 15A, 10V 4V @ 1mA 125nC @ 10V 6686pF @ 50V 269W Through Hole TO-220-3
PSMN7R0-100ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 100A 6.8 mOhm @ 15A, 10V 4V @ 1mA 125nC @ 10V 6686pF @ 50V 269W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN7R0-100BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 100A (Tmb) 6.8 mOhm @ 15A, 10V 4V @ 1mA 125nC @ 10V 6686pF @ 50V 269W - -