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Manufacture :NXP SEMICONDUCTORS

125nC @ 10V,Gate Charge (Qg) @ Vgs

TO-220-3,Package / Case

3 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

PSMN7R0-100PS,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 100V 100A (Ta) 12 mOhm @ 15A, 10V 4V @ 1mA 125nC @ 10V 6686pF @ 50V 269W Through Hole TO-220-3

BUK653R4-40C,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 100A 3.6 mOhm @ 25A, 10V 2.8V @ 1mA 125nC @ 10V 8020pF @ 25V 204W Through Hole TO-220-3

PSMN4R4-80PS,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 80V 100A (Tc) 4.1 mOhm @ 15A, 10V 4V @ 1mA 125nC @ 10V 8400pF @ 40V 306W Through Hole TO-220-3

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
PSMN7R0-100PS,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	100V	100A (Ta)	12 mOhm @ 15A, 10V	4V @ 1mA	125nC @ 10V	6686pF @ 50V	269W	Through Hole	TO-220-3
BUK653R4-40C,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	100A	3.6 mOhm @ 25A, 10V	2.8V @ 1mA	125nC @ 10V	8020pF @ 25V	204W	Through Hole	TO-220-3
PSMN4R4-80PS,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	80V	100A (Tc)	4.1 mOhm @ 15A, 10V	4V @ 1mA	125nC @ 10V	8400pF @ 40V	306W	Through Hole	TO-220-3

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