| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK9E1R6-30E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 120A (Ta) | 1.4 mOhm @ 25A, 10V | 2.1V @ 1mA | 113nC @ 5V | 16150pF @ 25V | 349W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| BUK951R6-30E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 120A (Ta) | 1.4 mOhm @ 25A, 10V | 2.1V @ 1mA | 113nC @ 5V | 16150pF @ 25V | 349W | Through Hole | TO-220-3 | |
| BUK961R4-30E,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 120A (Ta) | 1.4 mOhm @ 25A, 5V | 2.1V @ 1mA | 113nC @ 5V | 16150pF @ 25V | 357W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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