Manufacture :NXP SEMICONDUCTORS
-,Gate Charge (Qg) @ Vgs
300W,Power - Max
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK9606-55A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7506-55A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 6.3 mOhm @ 25A, 10V 4V @ 1mA - 6000pF @ 25V 300W Through Hole TO-220-3
BUK9E06-55A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 300W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK7515-100A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 75A 15 mOhm @ 25A, 10V 4V @ 1mA - 6000pF @ 25V 300W Through Hole TO-220-3
BUK7606-55A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 6.3 mOhm @ 25A, 10V 4V @ 1mA - 6000pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9506-55A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 300W Through Hole TO-220-3