Manufacture :NXP SEMICONDUCTORS
40V,Drain to Source Voltage (Vdss)
-,Gate Charge (Qg) @ Vgs
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK9907-40ATC,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 6.5 mOhm @ 50A, 10V 2V @ 1mA - 5836pF @ 25V 272W Through Hole TO-220-5
BUK9107-40ATC,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 6.2 mOhm @ 50A, 10V 2V @ 1mA - 5836pF @ 25V 272W Surface Mount TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
BUK9E1R9-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V - - - - - - - -
BUK7Y3R5-40E,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V - - - - - - - -
BUK9Y3R5-40E,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V - - - - - - - -
BUK7Y3R0-40EX NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V - - - - - - - -
BUK951R8-40EQ NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V - - - - - - - -
BUK7C1R4-40EJ NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V - - - - - - - -
BUK7C1R2-40EJ NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V - - - - - - - -
BUK9C1R3-40EJ NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 190A (Tmb) 1.3 mOhm @ 90A, 5V - - - 349W - -