| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN6R3-120ESQ | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 120V | 70A (Tmb) | 6.7 mOhm @ 25A, 10V | 4V @ 250µA | 207.1nC @ 10V | 11384pF @ 60V | 405W | - | - | |
| PSMN027-100XS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 23.4A (Tmb) | 26.8 mOhm @ 5A, 10V | 4V @ 250µA | 30nC @ 10V | 1624pF @ 50V | 41.1W | Through Hole | TO-220-3 Isolated Tab | |
| IRFR220,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 200V | 4.8A (Tc) | 800 mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | 280pF @ 25V | 42W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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