Manufacture :NXP SEMICONDUCTORS
4V @ 1mA,Vgs(th) (Max) @ Id
57.7W,Power - Max
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN7R0-100XS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 55A (Tmb) 6.8 mOhm @ 15A, 10V 4V @ 1mA 121nC @ 10V 6686pF @ 50V 57.7W Through Hole TO-220-3 Isolated Tab
PHU11NQ10T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 10.9A (Tc) 180 mOhm @ 9A, 10V 4V @ 1mA 14.7nC @ 10V 360pF @ 25V 57.7W Through Hole TO-251-3 Long Leads, IPak, TO-251AB