Manufacture :NXP SEMICONDUCTORS
4V @ 1mA,Vgs(th) (Max) @ Id
333W,Power - Max
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK762R0-40C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Tc) 2 mOhm @ 25A, 10V 4V @ 1mA 175nC @ 10V 11323pF @ 25V 333W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK764R0-75C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 100A (Tc) 4 mOhm @ 25A, 10V 4V @ 1mA 142nC @ 10V 11659pF @ 25V 333W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK752R3-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 2.3 mOhm @ 25A, 10V 4V @ 1mA 175nC @ 10V 11323pF @ 25V 333W Through Hole TO-220-3
BUK754R3-75C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 100A 4.3 mOhm @ 25A, 10V 4V @ 1mA 142nC @ 10V 11659pF @ 25V 333W Through Hole TO-220-3
BUK7E2R3-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 2.3 mOhm @ 25A, 10V 4V @ 1mA 175nC @ 10V 11323pF @ 25V 333W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK7E4R3-75C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 100A 4.3 mOhm @ 25A, 10V 4V @ 1mA 142nC @ 10V 11659pF @ 25V 333W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK761R8-30C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tc) 1.8 mOhm @ 25A, 10V 4V @ 1mA 150nC @ 10V 10349pF @ 25V 333W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB