| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK762R6-40E,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 40V | 120A (Ta) | 2.6 mOhm @ 25A, 10V | 4V @ 1mA | 91nC @ 10V | 7130pF @ 25V | 263W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| BUK763R9-60E,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Ta) | 3.9 mOhm @ 25A, 10V | 4V @ 1mA | 103nC @ 10V | 7480pF @ 25V | 263W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| BUK768R1-100E,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 75A (Ta) | 8.1 mOhm @ 25A, 10V | 4V @ 1mA | 108nC @ 10V | 7380pF @ 25V | 263W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| PSMN8R5-100PSQ | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 100A (Tj) | 8.5 mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | 5512pF @ 50V | 263W | Through Hole | TO-220-3 | |
| PSMN8R5-100ESQ | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 100A (Tj) | 8.5 mOhm @ 25A, 10V | 4V @ 1mA | 111nC @ 10V | 5512pF @ 50V | 263W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| PSMN3R9-60PSQ | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 130A | 3.9 mOhm @ 25A, 10V | 4V @ 1mA | 103nC @ 10V | 5600pF @ 25V | 263W | Through Hole | TO-220-3 | |
| PHW80NQ10T,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 80A (Tc) | 15 mOhm @ 25A, 10V | 4V @ 1mA | 109nC @ 10V | 4720pF @ 25V | 263W | Through Hole | TO-247-3 |
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