| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN4R6-60PS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A | 4.6 mOhm @ 25A, 10V | 4V @ 1mA | 70.8nC @ 10V | 4426pF @ 30V | 211W | Through Hole | TO-220-3 | |
| PSMN2R8-40PS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 40V | 100A | 2.8 mOhm @ 10A, 10V | 4V @ 1mA | 71nC @ 10V | 4491pF @ 20V | 211W | Through Hole | TO-220-3 | |
| PSMN9R5-100PS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 89A | 9.6 mOhm @ 15A, 10V | 4V @ 1mA | 82nC @ 10V | 4454pF @ 50V | 211W | Through Hole | TO-220-3 | |
| BUK7509-55A,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 55V | 75A | 9 mOhm @ 25A, 10V | 4V @ 1mA | 62nC @ 0V | 3271pF @ 25V | 211W | Through Hole | TO-220-3 | |
| PSMN4R6-60BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Tmb) | 4.4 mOhm @ 25A, 10V | 4V @ 1mA | 70.8nC @ 10V | 4426pF @ 30V | 211W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| BUK7609-55A,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 55V | 75A | 9 mOhm @ 25A, 10V | 4V @ 1mA | 62nC @ 0V | 3271pF @ 25V | 211W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| PSMN2R8-40BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 40V | 100A (Tmb) | 2.9 mOhm @ 10A, 10V | 4V @ 1mA | 71nC @ 10V | 4491pF @ 20V | 211W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| PSMN9R5-100BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 89A (Tmb) | 9.6 mOhm @ 15A, 10V | 4V @ 1mA | 82nC @ 10V | 4454pF @ 50V | 211W | - | - |
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