Manufacture :NXP SEMICONDUCTORS
4V @ 1mA,Vgs(th) (Max) @ Id
203W,Power - Max
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK765R2-40B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Tc) 5.2 mOhm @ 25A, 10V 4V @ 1mA 52nC @ 10V 3789pF @ 25V 203W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK763R6-40C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Tc) 3.6 mOhm @ 25A, 10V 4V @ 1mA 97nC @ 10V 5708pF @ 25V 203W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7507-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 7.1 mOhm @ 25A, 10V 4V @ 1mA 53nC @ 10V 3760pF @ 25V 203W Through Hole TO-220-3
BUK7607-55B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 7.1 mOhm @ 25A, 10V 4V @ 1mA 53nC @ 10V 3760pF @ 25V 203W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK755R2-40B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 5.2 mOhm @ 25A, 10V 4V @ 1mA 52nC @ 10V 3789pF @ 25V 203W Through Hole TO-220-3
BUK754R0-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 4 mOhm @ 25A, 10V 4V @ 1mA 97nC @ 10V 5708pF @ 25V 203W Through Hole TO-220-3
BUK7E07-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 7.1 mOhm @ 25A, 10V 4V @ 1mA 53nC @ 10V 3760pF @ 25V 203W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA