Manufacture :NXP SEMICONDUCTORS
4V @ 1mA,Vgs(th) (Max) @ Id
200W,Power - Max
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK7520-100A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 63A 20 mOhm @ 25A, 10V 4V @ 1mA - 4373pF @ 25V 200W Through Hole TO-220-3
BUK7619-100B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 64A (Ta) 19 mOhm @ 25A, 10V 4V @ 1mA 53nC @ 10V 3400pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7620-100A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 63A 20 mOhm @ 25A, 10V 4V @ 1mA - 4373pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHB143NQ04T,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Tc) 5.2 mOhm @ 25A, 10V 4V @ 1mA 52nC @ 10V 2840pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHP112N06T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 8 mOhm @ 25A, 10V 4V @ 1mA 87nC @ 10V 4352pF @ 25V 200W Through Hole TO-220-3
PHP119NQ06T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 7.1 mOhm @ 25A, 10V 4V @ 1mA 53nC @ 10V 2820pF @ 25V 200W Through Hole TO-220-3
PHP143NQ04T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Tc) 5.2 mOhm @ 25A, 10V 4V @ 1mA 52nC @ 10V 2840pF @ 25V 200W Through Hole TO-220-3
PHB112N06T,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 8 mOhm @ 25A, 10V 4V @ 1mA 87nC @ 10V 4352pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHB119NQ06T,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 7.1 mOhm @ 25A, 10V 4V @ 1mA 53nC @ 10V 2820pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB