Manufacture :NXP SEMICONDUCTORS
4V @ 1mA,Vgs(th) (Max) @ Id
149W,Power - Max
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN7R6-60PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 92A (Tc) 7.8 mOhm @ 25A, 10V 4V @ 1mA 38.7nC @ 10V 2651pF @ 30V 149W Through Hole TO-220-3
PSMN7R6-60BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 92A (Tmb) 7.8 mOhm @ 25A, 10V 4V @ 1mA 38.7nC @ 10V 2651pF @ 30V 149W - -
BUK7635-100A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 41A 35 mOhm @ 25A, 10V 4V @ 1mA - 2535pF @ 25V 149W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7535-100A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 41A 35 mOhm @ 25A, 10V 4V @ 1mA - 2535pF @ 25V 149W Through Hole TO-220-3