Manufacture :NXP SEMICONDUCTORS
4V @ 1mA,Vgs(th) (Max) @ Id
82nC @ 10V,Gate Charge (Qg) @ Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN9R5-100PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 89A 9.6 mOhm @ 15A, 10V 4V @ 1mA 82nC @ 10V 4454pF @ 50V 211W Through Hole TO-220-3
BUK764R4-60E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A (Ta) 4.5 mOhm @ 25A, 10V 4V @ 1mA 82nC @ 10V 6230pF @ 25V 234W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7E4R6-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A (Ta) 4.6 mOhm @ 25A, 10V 4V @ 1mA 82nC @ 10V 6230pF @ 25V 234W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN9R5-100BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 89A (Tmb) 9.6 mOhm @ 15A, 10V 4V @ 1mA 82nC @ 10V 4454pF @ 50V 211W - -
BUK754R7-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A (Ta) 4.6 mOhm @ 25A, 10V 4V @ 1mA 82nC @ 10V 6230pF @ 25V 234W Through Hole TO-220-3