Manufacture :NXP SEMICONDUCTORS
4V @ 1mA,Vgs(th) (Max) @ Id
145nC @ 10V,Gate Charge (Qg) @ Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK7E1R8-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.8 mOhm @ 25A, 10V 4V @ 1mA 145nC @ 10V 11340pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK751R8-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.8 mOhm @ 25A, 10V 4V @ 1mA 145nC @ 10V 11340pF @ 25V 349W Through Hole TO-220-3
PSMN5R6-100XS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 61.8A (Tmb) 5.6 mOhm @ 15A, 10V 4V @ 1mA 145nC @ 10V 8061pF @ 50V 60W Through Hole TO-220-3 Isolated Tab
BUK761R6-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.6 mOhm @ 25A, 10V 4V @ 1mA 145nC @ 10V 11340pF @ 25V 357W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB