Manufacture :NXP SEMICONDUCTORS
4V @ 1mA,Vgs(th) (Max) @ Id
11nC @ 10V,Gate Charge (Qg) @ Vgs
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN050-80BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 22A (Tmb) 46 mOhm @ 10A, 10V 4V @ 1mA 11nC @ 10V 633pF @ 12V 56W - -
PHP20N06T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 20.3A 75 mOhm @ 10A, 10V 4V @ 1mA 11nC @ 10V 483pF @ 25V 62W Through Hole TO-220-3
PHB20N06T,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 20.3A (Tc) 75 mOhm @ 10A, 10V 4V @ 1mA 11nC @ 10V 483pF @ 25V 62W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHD20N06T,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 18A (Tc) 77 mOhm @ 10A, 10V 4V @ 1mA 11nC @ 10V 422pF @ 25V 51W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN050-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 22A (Tc) 51 mOhm @ 10A, 10V 4V @ 1mA 11nC @ 10V 633pF @ 12V 56W Through Hole TO-220-3