Manufacture :NXP SEMICONDUCTORS
4V @ 1mA,Vgs(th) (Max) @ Id
114nC @ 10V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK7E3R5-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 3.5 mOhm @ 25A, 10V 4V @ 1mA 114nC @ 10V 8920pF @ 25V 293W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK753R5-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 3.5 mOhm @ 25A, 10V 4V @ 1mA 114nC @ 10V 8920pF @ 25V 293W Through Hole TO-220-3
BUK763R1-60E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 3.1 mOhm @ 25A, 10V 4V @ 1mA 114nC @ 10V 8920pF @ 25V 293W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB