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Home Category Discrete Semiconductor Products FETs single, Arrays and Modules
Manufacture :NXP SEMICONDUCTORS
2.3 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
4V @ 1mA,Vgs(th) (Max) @ Id
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK752R3-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 2.3 mOhm @ 25A, 10V 4V @ 1mA 175nC @ 10V 11323pF @ 25V 333W Through Hole TO-220-3
BUK7E2R3-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 2.3 mOhm @ 25A, 10V 4V @ 1mA 175nC @ 10V 11323pF @ 25V 333W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK752R3-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 2.3 mOhm @ 25A, 10V 4V @ 1mA 109.2nC @ 10V 8500pF @ 25V 293W Through Hole TO-220-3
BUK7E2R3-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 2.3 mOhm @ 25A, 10V 4V @ 1mA 109.2nC @ 10V 8500pF @ 25V 293W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA


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