Manufacture :NXP SEMICONDUCTORS
120A (Ta),Current - Continuous Drain (Id) @ 25°C
4V @ 1mA,Vgs(th) (Max) @ Id
27 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK762R6-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 2.6 mOhm @ 25A, 10V 4V @ 1mA 91nC @ 10V 7130pF @ 25V 263W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7E1R8-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.8 mOhm @ 25A, 10V 4V @ 1mA 145nC @ 10V 11340pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK7E2R6-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 2.6 mOhm @ 25A, 10V 4V @ 1mA 158nC @ 10V 11180pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK751R8-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.8 mOhm @ 25A, 10V 4V @ 1mA 145nC @ 10V 11340pF @ 25V 349W Through Hole TO-220-3
BUK752R7-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 2.6 mOhm @ 25A, 10V 4V @ 1mA 158nC @ 10V 11180pF @ 25V 349W Through Hole TO-220-3
BUK7E1R6-30E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.6 mOhm @ 25A, 10V 4V @ 1mA 154nC @ 10V 11960pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK751R6-30E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.6 mOhm @ 25A, 10V 4V @ 1mA 154nC @ 10V 11960pF @ 25V 349W Through Hole TO-220-3
BUK7E4R0-80E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4 mOhm @ 25A, 10V 4V @ 1mA 169nC @ 10V 12030pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK7E5R2-100E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 120A (Ta) 5.2 mOhm @ 25A, 10V 4V @ 1mA 180nC @ 10V 11810pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK753R8-80E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4 mOhm @ 25A, 10V 4V @ 1mA 169nC @ 10V 12030pF @ 25V 349W Through Hole TO-220-3