Manufacture :NXP SEMICONDUCTORS
100A,Current - Continuous Drain (Id) @ 25°C
4V @ 1mA,Vgs(th) (Max) @ Id
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN4R6-60PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A 4.6 mOhm @ 25A, 10V 4V @ 1mA 70.8nC @ 10V 4426pF @ 30V 211W Through Hole TO-220-3
PSMN2R8-40PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 2.8 mOhm @ 10A, 10V 4V @ 1mA 71nC @ 10V 4491pF @ 20V 211W Through Hole TO-220-3
PSMN6R5-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 100A 6.9 mOhm @ 15A, 10V 4V @ 1mA 71nC @ 10V 4461pF @ 40V 210W Through Hole TO-220-3
BUK752R3-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 2.3 mOhm @ 25A, 10V 4V @ 1mA 175nC @ 10V 11323pF @ 25V 333W Through Hole TO-220-3
BUK754R3-75C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 100A 4.3 mOhm @ 25A, 10V 4V @ 1mA 142nC @ 10V 11659pF @ 25V 333W Through Hole TO-220-3
BUK7E2R3-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 2.3 mOhm @ 25A, 10V 4V @ 1mA 175nC @ 10V 11323pF @ 25V 333W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK7E4R3-75C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 100A 4.3 mOhm @ 25A, 10V 4V @ 1mA 142nC @ 10V 11659pF @ 25V 333W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK754R0-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 4 mOhm @ 25A, 10V 4V @ 1mA 97nC @ 10V 5708pF @ 25V 203W Through Hole TO-220-3
PSMN7R0-100ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 100A 6.8 mOhm @ 15A, 10V 4V @ 1mA 125nC @ 10V 6686pF @ 50V 269W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA