Manufacture :NXP SEMICONDUCTORS
110V,Drain to Source Voltage (Vdss)
4V @ 1mA,Vgs(th) (Max) @ Id
11 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PHP23NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 23A 70 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 830pF @ 25V 100W Through Hole TO-220-3
PHP18NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 18A 90 mOhm @ 9A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 25V 79W Through Hole TO-220-3
PHP27NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 27.6A 50 mOhm @ 14A, 10V 4V @ 1mA 30nC @ 10V 1240pF @ 25V 107W Through Hole TO-220-3
PSMN015-110P,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 75A (Tc) 15 mOhm @ 25A, 10V 4V @ 1mA 90nC @ 10V 4900pF @ 25V 300W Through Hole TO-220-3
PHP34NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 35A (Tc) 40 mOhm @ 17A, 10V 4V @ 1mA 40nC @ 10V 1700pF @ 25V 136W Through Hole TO-220-3
PHX18NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 12.5A (Ta) 90 mOhm @ 9A, 10V 4V @ 1mA 21nC @ 10V 635pF @ 25V 31.2W Through Hole TO-220-3 Isolated Tab
PHX23NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 16A (Ta) 70 mOhm @ 13A, 10V 4V @ 1mA 22nC @ 10V 830pF @ 25V 41.6W Through Hole TO-220-3 Isolated Tab
PHX27NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 20.8A (Ta) 50 mOhm @ 14A, 10V 4V @ 1mA 30nC @ 10V 1240pF @ 25V 50W Through Hole TO-220-3 Isolated Tab
PHX34NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 24.8A (Ta) 40 mOhm @ 17A, 10V 4V @ 1mA 40nC @ 10V 1700pF @ 25V 56.8W Through Hole TO-220-3 Isolated Tab
PHX45NQ11T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 110V 30.4A (Ta) 25 mOhm @ 25A, 10V 4V @ 1mA 61nC @ 10V 2600pF @ 25V 62.5W Through Hole TO-220-3 Isolated Tab