Manufacture :NXP SEMICONDUCTORS
2.8V @ 1mA,Vgs(th) (Max) @ Id
263W,Power - Max
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK662R4-40C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A 2.3 mOhm @ 25A, 10V 2.8V @ 1mA 199nC @ 10V 11334pF @ 25V 263W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK653R5-55C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 120A 3.9 mOhm @ 25A, 10V 2.8V @ 1mA 191nC @ 10V 11516pF @ 25V 263W Through Hole TO-220-3
BUK652R1-30C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A 2.4 mOhm @ 25A, 10V 2.8V @ 1mA 168nC @ 10V 10918pF @ 25V 263W Through Hole TO-220-3
BUK655R0-75C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 120A 5.3 mOhm @ 25A, 10V 2.8V @ 1mA 177nC @ 10V 11400pF @ 25V 263W Through Hole TO-220-3
BUK663R5-55C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 120A 3.4 mOhm @ 25A, 10V 2.8V @ 1mA 191nC @ 10V 11516pF @ 25V 263W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK664R8-75C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 120A 5 mOhm @ 25A, 10V 2.8V @ 1mA 177nC @ 10V 11400pF @ 25V 263W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK652R6-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A 2.7 mOhm @ 25A, 10V 2.8V @ 1mA 199nC @ 10V 11334pF @ 25V 263W Through Hole TO-220-3
BUK661R8-30C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A 1.9 mOhm @ 25A, 10V 2.8V @ 1mA 168nC @ 10V 10918pF @ 25V 263W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB