Manufacture :NXP SEMICONDUCTORS
2.8V @ 1mA,Vgs(th) (Max) @ Id
204W,Power - Max
TO-220-3,Package / Case
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK653R4-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 3.6 mOhm @ 25A, 10V 2.8V @ 1mA 125nC @ 10V 8020pF @ 25V 204W Through Hole TO-220-3
BUK654R6-55C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 100A 5.4 mOhm @ 25A, 10V 2.8V @ 1mA 124nC @ 10V 7750pF @ 25V 204W Through Hole TO-220-3
BUK6507-75C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 100A 7.6 mOhm @ 25A, 10V 2.8V @ 1mA 123nC @ 10V 7600pF @ 25V 204W Through Hole TO-220-3
BUK652R7-30C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A 3.3 mOhm @ 25A, 10V 2.8V @ 1mA 114nC @ 10V 6960pF @ 25V 204W Through Hole TO-220-3