Manufacture :NXP SEMICONDUCTORS
2.8V @ 1mA,Vgs(th) (Max) @ Id
15100pF @ 25V,Input Capacitance (Ciss) @ Vds
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK661R9-40C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A 1.9 mOhm @ 25A, 10V 2.8V @ 1mA 260nC @ 10V 15100pF @ 25V 306W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK652R3-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A 2.3 mOhm @ 25A, 10V 2.8V @ 1mA 260nC @ 10V 15100pF @ 25V 306W Through Hole TO-220-3
BUK6E2R3-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A 2.3 mOhm @ 25A, 10V 2.8V @ 1mA 260nC @ 10V 15100pF @ 25V 306W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA