Manufacture :NXP SEMICONDUCTORS
2.8V @ 1mA,Vgs(th) (Max) @ Id
TO-262-3 Long Leads, I²Pak, TO-262AA,Package / Case
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK6E2R0-30C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A 2.2 mOhm @ 25A, 10V 2.8V @ 1mA 229nC @ 10V 14964pF @ 25V 306W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK6E2R3-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A 2.3 mOhm @ 25A, 10V 2.8V @ 1mA 260nC @ 10V 15100pF @ 25V 306W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK6E3R2-55C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 120A 3.2 mOhm @ 25A, 10V 2.8V @ 1mA 258nC @ 10V 15300pF @ 25V 306W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK6E4R0-75C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 120A 4.2 mOhm @ 25A, 10V 2.8V @ 1mA 234nC @ 10V 15450pF @ 25V 306W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK6E3R4-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 3.6 mOhm @ 25A, 10V 2.8V @ 1mA 125nC @ 10V 8020pF @ 25V 204W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA