Manufacture :NXP SEMICONDUCTORS
2.8V @ 1mA,Vgs(th) (Max) @ Id
TO-261-4, TO-261AA,Package / Case
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSP220,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 200V 225mA (Ta) 12 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSP225,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 250V 225mA 15 Ohm @ 200mA, 10V 2.8V @ 1mA - 90pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSP100,135 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 3.2A 100 mOhm @ 2.2A, 10V 2.8V @ 1mA 6nC @ 10V 250pF @ 20V 8.3W Surface Mount TO-261-4, TO-261AA
BSP030,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 10A (Ta) 30 mOhm @ 5A, 10V 2.8V @ 1mA 40nC @ 10V 770pF @ 24V 8.3W Surface Mount TO-261-4, TO-261AA
BSP250,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 30V 3A (Ta) 250 mOhm @ 1A, 10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V 1.65W Surface Mount TO-261-4, TO-261AA
BSP250,135 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 30V 3A 250 mOhm @ 1A, 10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V 1.65W Surface Mount TO-261-4, TO-261AA