Manufacture :NXP SEMICONDUCTORS
5.2 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK765R2-40B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Tc) 5.2 mOhm @ 25A, 10V 4V @ 1mA 52nC @ 10V 3789pF @ 25V 203W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9Y6R0-60E,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A (Ta) 5.2 mOhm @ 25A, 10V 2.1V @ 1mA 39.4nC @ 5V 6319pF @ 25V 195W Surface Mount SC-100, SOT-669, 4-LFPAK
BUK7E5R2-100E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 120A (Ta) 5.2 mOhm @ 25A, 10V 4V @ 1mA 180nC @ 10V 11810pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK755R2-40B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 5.2 mOhm @ 25A, 10V 4V @ 1mA 52nC @ 10V 3789pF @ 25V 203W Through Hole TO-220-3
BUK755R4-100E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 120A (Ta) 5.2 mOhm @ 25A, 10V 4V @ 1mA 180nC @ 10V 11810pF @ 25V 349W Through Hole TO-220-3
PHB143NQ04T,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Tc) 5.2 mOhm @ 25A, 10V 4V @ 1mA 52nC @ 10V 2840pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHP143NQ04T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Tc) 5.2 mOhm @ 25A, 10V 4V @ 1mA 52nC @ 10V 2840pF @ 25V 200W Through Hole TO-220-3