Manufacture :NXP SEMICONDUCTORS
4.8 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK654R8-40C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 4.8 mOhm @ 25A, 10V 2.8V @ 1mA 88nC @ 10V 5200pF @ 25V 158W Through Hole TO-220-3
BUK7Y4R8-60EX NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A (Ta) 4.8 mOhm @ 25A, 10V 4V @ 1mA 73.1nC @ 10V 5520pF @ 25V 238W Surface Mount SC-100, SOT-669, 4-LFPAK
PH4830L,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 84A (Tc) 4.8 mOhm @ 25A, 10V 2.15V @ 1mA 22.9nC @ 4.5V 2786pF @ 12V 62.5W Surface Mount SC-100, SOT-669, 4-LFPAK
PSMN4R8-100BSEJ NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 120A 4.8 mOhm @ 25A, 10V 4V @ 1mA 278nC @ 10V 14400pF @ 50V 405W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB