Manufacture :NXP SEMICONDUCTORS
4.6 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN4R6-60PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A 4.6 mOhm @ 25A, 10V 4V @ 1mA 70.8nC @ 10V 4426pF @ 30V 211W Through Hole TO-220-3
PSMN4R5-40PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Tc) 4.6 mOhm @ 25A, 10V 4V @ 1mA 42.3nC @ 10V 2683pF @ 12V 148W Through Hole TO-220-3
BUK7E4R6-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A (Ta) 4.6 mOhm @ 25A, 10V 4V @ 1mA 82nC @ 10V 6230pF @ 25V 234W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9605-30A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A 4.6 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 230W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK754R7-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A (Ta) 4.6 mOhm @ 25A, 10V 4V @ 1mA 82nC @ 10V 6230pF @ 25V 234W Through Hole TO-220-3
BUK664R6-40C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A 4.6 mOhm @ 25A, 10V 2.8V @ 1mA 88nC @ 10V 5200pF @ 25V 158W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9505-30A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A 4.6 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 230W Through Hole TO-220-3
PHD110NQ03LT,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 25V 75A (Tc) 4.6 mOhm @ 25A, 10V 2V @ 1mA 26.7nC @ 5V 2200pF @ 25V 115W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63