Manufacture :NXP SEMICONDUCTORS
4.2 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK654R0-75C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 120A 4.2 mOhm @ 25A, 10V 2.8V @ 1mA 234nC @ 10V 15450pF @ 25V 306W Through Hole TO-220-3
BUK6E4R0-75C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 120A 4.2 mOhm @ 25A, 10V 2.8V @ 1mA 234nC @ 10V 15450pF @ 25V 306W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E4R4-80E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4.2 mOhm @ 25A, 10V 2.1V @ 1mA 123nC @ 5V 17130pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK954R4-80E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4.2 mOhm @ 25A, 10V 2.1V @ 1mA 123nC @ 5V 17130pF @ 25V 349W Through Hole TO-220-3
BUK764R2-80E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4.2 mOhm @ 25A, 10V 4V @ 1mA 136nC @ 10V 10426pF @ 25V 324W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN004-55W,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 100A (Tc) 4.2 mOhm @ 25A, 10V 2V @ 1mA 226nC @ 5V 13000pF @ 25V 300W Through Hole TO-247-3