| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK653R7-30C,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 100A | 3.9 mOhm @ 25A, 10V | 2.8V @ 1mA | 78nC @ 10V | 4707pF @ 25V | 158W | Through Hole | TO-220-3 | |
| BUK653R5-55C,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 55V | 120A | 3.9 mOhm @ 25A, 10V | 2.8V @ 1mA | 191nC @ 10V | 11516pF @ 25V | 263W | Through Hole | TO-220-3 | |
| BUK763R9-60E,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Ta) | 3.9 mOhm @ 25A, 10V | 4V @ 1mA | 103nC @ 10V | 7480pF @ 25V | 263W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| PSMN4R2-60PLQ | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 130A (Tmb) | 3.9 mOhm @ 25A, 10V | 2.1V @ 1mA | 151nC @ 10V | 8533pF @ 25V | 263W | Through Hole | TO-220-3 | |
| BUK964R2-60E,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 100A (Ta) | 3.9 mOhm @ 25A, 10V | 2.1V @ 1mA | 72nC @ 5V | 11380pF @ 25V | 263W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| PSMN3R9-60PSQ | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 130A | 3.9 mOhm @ 25A, 10V | 4V @ 1mA | 103nC @ 10V | 5600pF @ 25V | 263W | Through Hole | TO-220-3 | |
| PSMN3R8-100BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 120A (Tmb) | 3.9 mOhm @ 25A, 10V | 4V @ 1mA | 170nC @ 10V | 9900pF @ 50V | 306W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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