Manufacture :NXP SEMICONDUCTORS
3.5 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK663R5-30C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A 3.5 mOhm @ 25A, 10V 2.8V @ 1mA 78nC @ 10V 4707pF @ 25V 158W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN3R5-80ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 3.5 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9800pF @ 30V 338W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK964R1-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Ta) 3.5 mOhm @ 25A, 10V 2.1V @ 1mA 52.1nC @ 5V 6650pF @ 25V 182W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN3R5-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 3.5 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9961pF @ 40V 338W Through Hole TO-220-3
BUK7E3R5-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 3.5 mOhm @ 25A, 10V 4V @ 1mA 114nC @ 10V 8920pF @ 25V 293W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK753R5-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 3.5 mOhm @ 25A, 10V 4V @ 1mA 114nC @ 10V 8920pF @ 25V 293W Through Hole TO-220-3
PSMN3R3-80BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 3.5 mOhm @ 25A, 10V 4V @ 1mA 111nC @ 10V 8161pF @ 40V 306W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN3R2-30YLC,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tmb) 3.5 mOhm @ 25A, 10V 1.95V @ 1mA 29.5nC @ 10V 2081pF @ 15V 92W Surface Mount SC-100, SOT-669, 4-LFPAK