Manufacture :NXP SEMICONDUCTORS
30V,Drain to Source Voltage (Vdss)
2.8 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK662R5-30C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A 2.8 mOhm @ 25A, 10V 2.8V @ 1mA 114nC @ 10V 6960pF @ 25V 204W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN2R6-30YLC,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tmb) 2.8 mOhm @ 25A, 10V 1.95V @ 1mA 39nC @ 10V 2435pF @ 15V 106W Surface Mount SC-100, SOT-669, 4-LFPAK
PSMN003-30B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A (Tc) 2.8 mOhm @ 25A, 10V 3V @ 1mA 170nC @ 10V 9200pF @ 25V 230W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN003-30P,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 75A (Tc) 2.8 mOhm @ 25A, 10V 3V @ 1mA 170nC @ 10V 9200pF @ 25V 230W Through Hole TO-220-3