Manufacture :NXP SEMICONDUCTORS
2.6 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK952R8-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 2.6 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 17450pF @ 25V 349W Through Hole TO-220-3
BUK762R6-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 2.6 mOhm @ 25A, 10V 4V @ 1mA 91nC @ 10V 7130pF @ 25V 263W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7E2R6-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 2.6 mOhm @ 25A, 10V 4V @ 1mA 158nC @ 10V 11180pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E2R8-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 2.6 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 17450pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK752R7-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 2.6 mOhm @ 25A, 10V 4V @ 1mA 158nC @ 10V 11180pF @ 25V 349W Through Hole TO-220-3
PSMN2R6-60PSQ NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 150A (Tmb) 2.6 mOhm @ 25A, 10V 4V @ 1mA 140nC @ 10V 7629pF @ 25V 326W Through Hole TO-220-3
PSMN2R5-60PLQ NXP SEMICONDUCTORS
MOSFET N-Channel, FREDFET 60V 1.5A (Tc) 2.6 mOhm @ 25A, 10V 2.1V @ 1mA 223nC @ 10V - 349W - -
BUK762R6-60E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 2.6 mOhm @ 25A, 10V 4V @ 1mA 140nC @ 10V 10170pF @ 25V 324W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB