| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK652R0-30C,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 120A | 2.2 mOhm @ 25A, 10V | 2.8V @ 1mA | 229nC @ 10V | 14964pF @ 25V | 306W | Through Hole | TO-220-3 | |
| PSMN2R0-60ES,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 120A (Tmb) | 2.2 mOhm @ 25A, 10V | 4V @ 1mA | 137nC @ 10V | 9997pF @ 30V | 338W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| BUK6E2R0-30C,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 120A | 2.2 mOhm @ 25A, 10V | 2.8V @ 1mA | 229nC @ 10V | 14964pF @ 25V | 306W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| PSMN2R1-40PLQ | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 40V | 150A (Tmb) | 2.2 mOhm @ 25A, 10V | 2.1V @ 1mA | 87.8nC @ 5V | 9584pF @ 25V | 293W | Through Hole | TO-220-3 | |
| BUK9E2R3-40E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 40V | 120A (Ta) | 2.2 mOhm @ 25A, 10V | 2.1V @ 1mA | 87.8nC @ 5V | 13160pF @ 25V | 293W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| BUK952R3-40E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 40V | 120A (Ta) | 2.2 mOhm @ 25A, 10V | 2.1V @ 1mA | 87.8nC @ 5V | 13160pF @ 25V | 293W | Through Hole | TO-220-3 | |
| PSMN2R2-40BS,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 40V | 100A (Tmb) | 2.2 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | 8423pF @ 20V | 306W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| PSMN2R0-60PS,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 60V | 120A (Tmb) | 2.2 mOhm @ 25A, 10V | 4V @ 1mA | 137nC @ 10V | 9997pF @ 30V | 338W | Through Hole | TO-220-3 |
© 2016 Copyright
