Manufacture :NXP SEMICONDUCTORS
1.8 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN1R8-30PL,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A 1.8 mOhm @ 25A, 10V 2.15V @ 1mA 170nC @ 10V 10180pF @ 12V 270W Through Hole TO-220-3
BUK7E1R8-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.8 mOhm @ 25A, 10V 4V @ 1mA 145nC @ 10V 11340pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK751R8-40E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.8 mOhm @ 25A, 10V 4V @ 1mA 145nC @ 10V 11340pF @ 25V 349W Through Hole TO-220-3
BUK761R8-30C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tc) 1.8 mOhm @ 25A, 10V 4V @ 1mA 150nC @ 10V 10349pF @ 25V 333W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN1R8-30BL,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A (Tmb) 1.8 mOhm @ 25A, 10V 2.15V @ 1mA 170nC @ 10V 10180pF @ 15V 270W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN1R8-40YLC,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Tmb) 1.8 mOhm @ 25A, 10V 1.95V @ 1mA 96nC @ 10V 6680pF @ 20V 272W Surface Mount SC-100, SOT-669, 4-LFPAK
BUK962R1-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.8 mOhm @ 25A, 10V 2.1V @ 1mA 87.8nC @ 5V 13160pF @ 25V 293W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PH1825AL,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 25V 100A (Tc) 1.8 mOhm @ 25A, 10V 2.15V @ 1mA 31nC @ 4.5V 4300pF @ 12V 104W Surface Mount SC-100, SOT-669, 4-LFPAK