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Manufacture :NXP SEMICONDUCTORS

40V,Drain to Source Voltage (Vdss)

1.7 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs

3 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

BUK951R9-40E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.7 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 16400pF @ 25V 349W Through Hole TO-220-3

PSMN1R9-40PLQ NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 150A 1.7 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 13200pF @ 25V 349W Through Hole TO-220-3

BUK9E1R8-40E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.7 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 16400pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
BUK951R9-40E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	120A (Ta)	1.7 mOhm @ 25A, 10V	2.1V @ 1mA	120nC @ 5V	16400pF @ 25V	349W	Through Hole	TO-220-3
PSMN1R9-40PLQ	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	150A	1.7 mOhm @ 25A, 10V	2.1V @ 1mA	120nC @ 5V	13200pF @ 25V	349W	Through Hole	TO-220-3
BUK9E1R8-40E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	120A (Ta)	1.7 mOhm @ 25A, 10V	2.1V @ 1mA	120nC @ 5V	16400pF @ 25V	349W	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA

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