Manufacture :NXP SEMICONDUCTORS
1.6 mOhm @ 25A, 10V,Rds On (Max) @ Id, Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK661R6-30C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A 1.6 mOhm @ 25A, 10V 2.8V @ 1mA 229nC @ 10V 14964pF @ 25V 306W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN1R5-40ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Tmb) 1.6 mOhm @ 25A, 10V 4V @ 1mA 136nC @ 10V 9710pF @ 20V 338W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK7E1R6-30E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.6 mOhm @ 25A, 10V 4V @ 1mA 154nC @ 10V 11960pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK751R6-30E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.6 mOhm @ 25A, 10V 4V @ 1mA 154nC @ 10V 11960pF @ 25V 349W Through Hole TO-220-3
BUK761R7-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.6 mOhm @ 25A, 10V 4V @ 1mA 118nC @ 10V 9700pF @ 25V 324W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK761R6-40E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.6 mOhm @ 25A, 10V 4V @ 1mA 145nC @ 10V 11340pF @ 25V 357W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN1R5-40PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 120A (Tmb) 1.6 mOhm @ 25A, 10V 4V @ 1mA 136nC @ 10V 9710pF @ 20V 338W Through Hole TO-220-3