Manufacture :NXP SEMICONDUCTORS
75A,Current - Continuous Drain (Id) @ 25°C
203W,Power - Max
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK9506-40B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 5 mOhm @ 25A, 10V 2V @ 1mA 44nC @ 5V 4901pF @ 25V 203W Through Hole TO-220-3
BUK9508-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 7 mOhm @ 25A, 10V 2V @ 1mA 45nC @ 5V 5280pF @ 25V 203W Through Hole TO-220-3
BUK7507-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 7.1 mOhm @ 25A, 10V 4V @ 1mA 53nC @ 10V 3760pF @ 25V 203W Through Hole TO-220-3
BUK9E08-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 7 mOhm @ 25A, 10V 2V @ 1mA 45nC @ 5V 5280pF @ 25V 203W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK755R2-40B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 5.2 mOhm @ 25A, 10V 4V @ 1mA 52nC @ 10V 3789pF @ 25V 203W Through Hole TO-220-3
BUK7E07-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 7.1 mOhm @ 25A, 10V 4V @ 1mA 53nC @ 10V 3760pF @ 25V 203W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA