Manufacture :NXP SEMICONDUCTORS
55V,Drain to Source Voltage (Vdss)
75A,Current - Continuous Drain (Id) @ 25°C
2V @ 1mA,Vgs(th) (Max) @ Id
15 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK9606-55A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9508-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 7 mOhm @ 25A, 10V 2V @ 1mA 45nC @ 5V 5280pF @ 25V 203W Through Hole TO-220-3
BUK9608-55A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 7.5 mOhm @ 25A, 10V 2V @ 1mA 92nC @ 5V 6021pF @ 25V 253W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9512-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 10 mOhm @ 25A, 10V 2V @ 1mA 31nC @ 5V 3693pF @ 25V 157W Through Hole TO-220-3
BUK9511-55A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 10 mOhm @ 25A, 10V 2V @ 1mA - 4230pF @ 25V 166W Through Hole TO-220-3
BUK9E08-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 7 mOhm @ 25A, 10V 2V @ 1mA 45nC @ 5V 5280pF @ 25V 203W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK954R2-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 3.7 mOhm @ 25A, 10V 2V @ 1mA 95nC @ 5V 10220pF @ 25V 300W Through Hole TO-220-3
BUK9E06-55A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 300W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9907-55ATE,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 6.2 mOhm @ 50A, 10V 2V @ 1mA 108nC @ 5V 5836pF @ 25V 272W Through Hole TO-220-5
PHP191NQ06LT,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 3.7 mOhm @ 25A, 10V 2V @ 1mA 95.6nC @ 5V 7665pF @ 25V 300W Through Hole TO-220-3