Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF640,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 200V | 16A (Tc) | 180 mOhm @ 8A, 10V | 4V @ 1mA | 63nC @ 10V | 1850pF @ 25V | 136W | Through Hole | TO-220-3 | |
PHD16N03LT,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 16A (Tc) | 67 mOhm @ 16A, 10V | 2V @ 1mA | 8.5nC @ 10V | 210pF @ 30V | 32.6W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |