Manufacture :NXP SEMICONDUCTORS
30V,Drain to Source Voltage (Vdss)
120A (Tmb),Current - Continuous Drain (Id) @ 25°C
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMNR90-30BL,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A (Tmb) 1 mOhm @ 25A, 10V 2.2V @ 1mA 243nC @ 10V 14850pF @ 15V 306W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN1R1-30EL,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A (Tmb) 1.3 mOhm @ 25A, 10V 2.2V @ 1mA 243nC @ 10V 14850pF @ 15V 338W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN1R5-30BLEJ NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A (Tmb) 1.5 mOhm @ 25A, 10V 2.15V @ 1mA 228nC @ 10V 14934pF @ 15V 401W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN3R4-30BLE,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A (Tmb) 3.4 mOhm @ 25A, 10V 2.15V @ 1mA 81nC @ 25A 4682pF @ 15V 178W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN1R1-30PL,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 120A (Tmb) 1.3 mOhm @ 25A, 10V 2.2V @ 1mA 243nC @ 10V 14850pF @ 15V 338W Through Hole TO-220-3