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Manufacture :NXP SEMICONDUCTORS

40V,Drain to Source Voltage (Vdss)

120A (Ta),Current - Continuous Drain (Id) @ 25°C

Through Hole,Mounting Type

9 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

BUK7E1R8-40E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.8 mOhm @ 25A, 10V 4V @ 1mA 145nC @ 10V 11340pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA

BUK751R8-40E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.8 mOhm @ 25A, 10V 4V @ 1mA 145nC @ 10V 11340pF @ 25V 349W Through Hole TO-220-3

BUK752R3-40E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 2.3 mOhm @ 25A, 10V 4V @ 1mA 109.2nC @ 10V 8500pF @ 25V 293W Through Hole TO-220-3

BUK7E2R3-40E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 2.3 mOhm @ 25A, 10V 4V @ 1mA 109.2nC @ 10V 8500pF @ 25V 293W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA

BUK9E2R3-40E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 2.2 mOhm @ 25A, 10V 2.1V @ 1mA 87.8nC @ 5V 13160pF @ 25V 293W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA

BUK952R3-40E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 2.2 mOhm @ 25A, 10V 2.1V @ 1mA 87.8nC @ 5V 13160pF @ 25V 293W Through Hole TO-220-3

BUK951R9-40E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.7 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 16400pF @ 25V 349W Through Hole TO-220-3

BUK7E1R9-40E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.9 mOhm @ 25A, 10V 4V @ 1mA 118nC @ 10V 9700pF @ 25V 324W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA

BUK9E1R8-40E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 40V 120A (Ta) 1.7 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 16400pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
BUK7E1R8-40E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	120A (Ta)	1.8 mOhm @ 25A, 10V	4V @ 1mA	145nC @ 10V	11340pF @ 25V	349W	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA
BUK751R8-40E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	120A (Ta)	1.8 mOhm @ 25A, 10V	4V @ 1mA	145nC @ 10V	11340pF @ 25V	349W	Through Hole	TO-220-3
BUK752R3-40E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	120A (Ta)	2.3 mOhm @ 25A, 10V	4V @ 1mA	109.2nC @ 10V	8500pF @ 25V	293W	Through Hole	TO-220-3
BUK7E2R3-40E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	120A (Ta)	2.3 mOhm @ 25A, 10V	4V @ 1mA	109.2nC @ 10V	8500pF @ 25V	293W	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E2R3-40E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	120A (Ta)	2.2 mOhm @ 25A, 10V	2.1V @ 1mA	87.8nC @ 5V	13160pF @ 25V	293W	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA
BUK952R3-40E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	120A (Ta)	2.2 mOhm @ 25A, 10V	2.1V @ 1mA	87.8nC @ 5V	13160pF @ 25V	293W	Through Hole	TO-220-3
BUK951R9-40E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	120A (Ta)	1.7 mOhm @ 25A, 10V	2.1V @ 1mA	120nC @ 5V	16400pF @ 25V	349W	Through Hole	TO-220-3
BUK7E1R9-40E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	120A (Ta)	1.9 mOhm @ 25A, 10V	4V @ 1mA	118nC @ 10V	9700pF @ 25V	324W	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E1R8-40E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	40V	120A (Ta)	1.7 mOhm @ 25A, 10V	2.1V @ 1mA	120nC @ 5V	16400pF @ 25V	349W	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA

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