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Manufacture :NXP SEMICONDUCTORS

30V,Drain to Source Voltage (Vdss)

120A (Ta),Current - Continuous Drain (Id) @ 25°C

8 parts found

Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case

BUK7E1R6-30E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.6 mOhm @ 25A, 10V 4V @ 1mA 154nC @ 10V 11960pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA

BUK751R6-30E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.6 mOhm @ 25A, 10V 4V @ 1mA 154nC @ 10V 11960pF @ 25V 349W Through Hole TO-220-3

BUK761R4-30E,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.45 mOhm @ 25A, 10V 4V @ 1mA 130nC @ 10V 9580pF @ 25V 324W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BUK961R5-30E,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.3 mOhm @ 25A, 10V 2.1V @ 1mA 93.4nC @ 5V 14500pF @ 25V 324W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BUK9E1R6-30E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.4 mOhm @ 25A, 10V 2.1V @ 1mA 113nC @ 5V 16150pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA

BUK951R6-30E,127 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.4 mOhm @ 25A, 10V 2.1V @ 1mA 113nC @ 5V 16150pF @ 25V 349W Through Hole TO-220-3

BUK961R4-30E,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.4 mOhm @ 25A, 5V 2.1V @ 1mA 113nC @ 5V 16150pF @ 25V 357W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BUK761R3-30E,118 NXP SEMICONDUCTORS

MOSFET N-Channel, Metal Oxide 30V 120A (Ta) 1.3 mOhm @ 25A, 10V 4V @ 1mA 154nC @ 10V 11960pF @ 25V 357W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Numbers	Manufacturer Name	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) @ Vgs	Input Capacitance (Ciss) @ Vds	Power - Max	Mounting Type	Package / Case
BUK7E1R6-30E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	120A (Ta)	1.6 mOhm @ 25A, 10V	4V @ 1mA	154nC @ 10V	11960pF @ 25V	349W	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA
BUK751R6-30E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	120A (Ta)	1.6 mOhm @ 25A, 10V	4V @ 1mA	154nC @ 10V	11960pF @ 25V	349W	Through Hole	TO-220-3
BUK761R4-30E,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	120A (Ta)	1.45 mOhm @ 25A, 10V	4V @ 1mA	130nC @ 10V	9580pF @ 25V	324W	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK961R5-30E,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	120A (Ta)	1.3 mOhm @ 25A, 10V	2.1V @ 1mA	93.4nC @ 5V	14500pF @ 25V	324W	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9E1R6-30E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	120A (Ta)	1.4 mOhm @ 25A, 10V	2.1V @ 1mA	113nC @ 5V	16150pF @ 25V	349W	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA
BUK951R6-30E,127	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	120A (Ta)	1.4 mOhm @ 25A, 10V	2.1V @ 1mA	113nC @ 5V	16150pF @ 25V	349W	Through Hole	TO-220-3
BUK961R4-30E,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	120A (Ta)	1.4 mOhm @ 25A, 5V	2.1V @ 1mA	113nC @ 5V	16150pF @ 25V	357W	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK761R3-30E,118	NXP SEMICONDUCTORS	MOSFET N-Channel, Metal Oxide	30V	120A (Ta)	1.3 mOhm @ 25A, 10V	4V @ 1mA	154nC @ 10V	11960pF @ 25V	357W	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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