Manufacture :NXP SEMICONDUCTORS
100A (Tmb),Current - Continuous Drain (Id) @ 25°C
4V @ 1mA,Vgs(th) (Max) @ Id
130nC @ 10V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN3R0-60ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A (Tmb) 3 mOhm @ 25A, 10V 4V @ 1mA 130nC @ 10V 8079pF @ 30V 306W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN3R0-60BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A (Tmb) 3.2 mOhm @ 25A, 10V 4V @ 1mA 130nC @ 10V 8079pF @ 30V 306W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN2R2-40BS,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 100A (Tmb) 2.2 mOhm @ 25A, 10V 4V @ 1mA 130nC @ 10V 8423pF @ 20V 306W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB