| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK7E4R0-80E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 80V | 120A (Ta) | 4 mOhm @ 25A, 10V | 4V @ 1mA | 169nC @ 10V | 12030pF @ 25V | 349W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| BUK9E4R4-80E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 80V | 120A (Ta) | 4.2 mOhm @ 25A, 10V | 2.1V @ 1mA | 123nC @ 5V | 17130pF @ 25V | 349W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| BUK753R8-80E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 80V | 120A (Ta) | 4 mOhm @ 25A, 10V | 4V @ 1mA | 169nC @ 10V | 12030pF @ 25V | 349W | Through Hole | TO-220-3 | |
| BUK954R4-80E,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 80V | 120A (Ta) | 4.2 mOhm @ 25A, 10V | 2.1V @ 1mA | 123nC @ 5V | 17130pF @ 25V | 349W | Through Hole | TO-220-3 |
© 2016 Copyright
