Manufacture :NXP SEMICONDUCTORS
80V,Drain to Source Voltage (Vdss)
169nC @ 10V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK7E4R0-80E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4 mOhm @ 25A, 10V 4V @ 1mA 169nC @ 10V 12030pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK753R8-80E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4 mOhm @ 25A, 10V 4V @ 1mA 169nC @ 10V 12030pF @ 25V 349W Through Hole TO-220-3
BUK763R8-80E,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 3.8 mOhm @ 25A, 10V 4V @ 1mA 169nC @ 10V 12030pF @ 25V 357W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB