Manufacture :NXP SEMICONDUCTORS
80V,Drain to Source Voltage (Vdss)
TO-262-3 Long Leads, I²Pak, TO-262AA,Package / Case
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN4R3-80ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 4.3 mOhm @ 25A, 10V 4V @ 1mA 111nC @ 10V 8161pF @ 40V 306W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN3R5-80ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 3.5 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9800pF @ 30V 338W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK7E4R0-80E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4 mOhm @ 25A, 10V 4V @ 1mA 169nC @ 10V 12030pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E4R4-80E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4.2 mOhm @ 25A, 10V 2.1V @ 1mA 123nC @ 5V 17130pF @ 25V 349W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PSMN3R3-80ES,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 3.3 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9961pF @ 40V 338W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA