Manufacture :NXP SEMICONDUCTORS
80V,Drain to Source Voltage (Vdss)
TO-220-3,Package / Case
12 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PSMN017-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 50A 17 mOhm @ 10A, 10V 4V @ 1mA 26nC @ 10V 1573pF @ 40V 103W Through Hole TO-220-3
PSMN8R7-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 90A 8.7 mOhm @ 10A, 10V 4V @ 1mA 52nC @ 10V 3346pF @ 40V 170W Through Hole TO-220-3
PSMN6R5-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 100A 6.9 mOhm @ 15A, 10V 4V @ 1mA 71nC @ 10V 4461pF @ 40V 210W Through Hole TO-220-3
PSMN4R4-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 100A (Tc) 4.1 mOhm @ 15A, 10V 4V @ 1mA 125nC @ 10V 8400pF @ 40V 306W Through Hole TO-220-3
BUK753R8-80E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4 mOhm @ 25A, 10V 4V @ 1mA 169nC @ 10V 12030pF @ 25V 349W Through Hole TO-220-3
PSMN3R3-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 3.3 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9961pF @ 40V 338W Through Hole TO-220-3
PSMN3R5-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 3.5 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9961pF @ 40V 338W Through Hole TO-220-3
PSMN4R3-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Tmb) 4.3 mOhm @ 25A, 10V 4V @ 1mA 111nC @ 10V 8161pF @ 40V 306W Through Hole TO-220-3
BUK954R4-80E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 120A (Ta) 4.2 mOhm @ 25A, 10V 2.1V @ 1mA 123nC @ 5V 17130pF @ 25V 349W Through Hole TO-220-3
PSMN5R0-80PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 80V 100A (Tc) 4.7 mOhm @ 15A, 10V 4V @ 1mA 101nC @ 10V 6793pF @ 12V 270W Through Hole TO-220-3