Manufacture :NXP SEMICONDUCTORS
75V,Drain to Source Voltage (Vdss)
121nC @ 10V,Gate Charge (Qg) @ Vgs
272W,Power - Max
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK7909-75AIE,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A 9 mOhm @ 50A, 10V 4V @ 1mA 121nC @ 10V 4700pF @ 25V 272W Through Hole TO-220-5
BUK7909-75ATE,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A 9 mOhm @ 50A, 10V 4V @ 1mA 121nC @ 10V 4700pF @ 25V 272W Through Hole TO-220-5
BUK7109-75AIE,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A 9 mOhm @ 50A, 10V 4V @ 1mA 121nC @ 10V 4700pF @ 25V 272W Surface Mount TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
BUK7109-75ATE,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A 9 mOhm @ 50A, 10V 4V @ 1mA 121nC @ 10V 4700pF @ 25V 272W Surface Mount TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
BUK7C10-75AITE,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 75A 10 mOhm @ 50A, 10V 4V @ 1mA 121nC @ 10V 4700pF @ 25V 272W Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB